Abstract
This study investigates the charge transport mechanism, dielectric relaxation and relaxor ferroelectric properties of Sm2MgMnO6 which exhibits monoclinic crystal structure with space group P21/n. The charge carriers conduction mechanism in the temperature range 150 K–239 K and 244 K–304 K are correlated barrier hopping (CBH) and overlapping large polaron tunneling (OLPT), respectively. The maximum barrier height associated to CBH model is 0.26 meV. The dc activation energy associated to CBH and OLPT model are 0.11 eV and 0.91 eV respectively. The polaron hopping energy associated to Mott's variable range hopping model is 0.11 eV at 244 K. The value of tanδ varies from 0.004 to 3.329 in temperature range 151.07 K–306.87 K and frequency range 1 kHz–800 kHz. The temperature variation of ε′, ε″ and tanδ shows a single relaxation which follows Vogel–Fulcher (VF) law. The VF law and the shape of P–E hysteresis loop confirms the relaxor ferroelectric nature of the studied material. The saturated polarization (PMax), remnant polarization (Pr) and coercive field (Ec) depend on both the electric field (E0) and frequency (f). The loop area (A′) and dielectric breakdown field (EBD) depend on E0 as A′∝E02 and EBD∝E0, respectively. The PMax, Pr and Ec depend on f as PMax∝f−0.13, Pr∝f−0.48 and Ec∝f−0.48, respectively. The energy storage efficiency (η) varies with frequency as: η%=20.44f0.21.
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