Charge transport in hopping systems under open-circuit conditions: computersimulation

Abstract

Discharge under open-circuit conditions may be often used to find the driftmobility of charge carriers in thin films of low-mobility materials. Theexisting theories of the discharge assume domination of charge transport inthe conduction band. In order to find whether the theories may be used forinterpretation of experimental results in hopping systems a computersimulation was carried out. It has been shown that direct usage of theexisting theories may lead to wrong values of drift mobility found from thedischarge. The method of estimation of real value of mobility in thetemperature range 100-500 K for various values of the decay parameter of theelectron localized wavefunction and for various standard deviations of theenergetic distribution of the localized states is presented in this paper.