Abstract
The electrical conductivity of epitaxial $\mathrm{BaTi}{\mathrm{O}}_{3}$ films was studied by small-signal impedance spectroscopy at temperatures of 10--720 K using Pt-$\mathrm{BaTi}{\mathrm{O}}_{3}\ensuremath{-}\mathrm{SrRu}{\mathrm{O}}_{3}$ capacitors. The $\ensuremath{\sim}150$-nm-thick $\mathrm{BaTi}{\mathrm{O}}_{3}$ films possessed different lattice strains and degrees of oxygen deficiency. A crossover between the low-temperature hopping of small polarons and the high-temperature semiconductor- to metal-type behavior was demonstrated in all films. It was suggested that the small electron polarons originate from self-trapping at Ti in the stoichiometric tensile-strained film and from trapping at Ti next to the oxygen vacancy in the oxygen-deficient films. The conduction-band transport was ascribed to the thermally activated release of the trapped electrons. It was pointed out that the electronic release can mimic the motion of oxygen vacancies, which are actually immobile.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
