Abstract
Electrical and optical characteristics of few-layered (3–4 L) chemical vapor deposition (CVD) grown MoS2, WS2, and MoS2–WS2 heterostructure-based back-gated field-effect transistor (FET) devices ha...
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
