Abstract
Charge transport in hybrid devices based on a quasiordered heterojunction consisting of a CdS film with nanopillarlike nanostructures embedded in a poly[2-methoxy-5-(20ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) layer was investigated. Temperature-dependent photoluminescence spectra indicate that there exist two kinds of defects (sulfur vacancy and sulfur interstitial) in this CdS film, which act as electron and hole traps, respectively. Current (I)-voltage (V) characteristics in dark show that charge recombination is the main mechanism at the hybrid interface when Ohmic contacts are formed at CdS/indium tin oxide and MEH-PPV/Au interfaces. Photocurrent action spectra and I-V performance under illumination indicate that the recombination was enhanced at the interface due to the participation of the defects. In view of these realities, the light intensity dependence of the photocurrent and the photovoltage of the hybrid devices could be understood by a quantitative model including trap-assistant recombination.
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