Charge transport and storage in ion implanted metal-oxide-semiconductor structures

Abstract

A physical model that predicts charge accumulation in MOS structures with implanted SiO 2 is investigated theoretically and experimentally. It is shown that, to achieve memory effects, MOS structures have to include a SiO 2 layer with different conduction mechanism along its thickness. The sign of the flat-band voltage shift depends on the localization of traps in oxide created by ion implantation. The time characteristics of charge accumulation and discharging of implanted SiO 2 by the pulses of applied voltage are similar to those observed in MNOS structures.