Abstract
Double-injection, transport, and accumulation of charge in metal-thick oxide-nitride-silicon and silicon-tunnel oxide-nitride-thick oxide-silicon structures have been theoretically studied. Calculation results were compared to experimental results. The charge transport in Si3N4 is quantitatively described assuming the multiphonon ionization theory of neutral traps with a capture cross-section less than 10−14 cm2. With traps amphoterism taken into account, the calculation predicts the existence of a layer with their excessive concentration near the SiO2/Si3N4 interface. The model satisfactorily describes the write/erase characteristics in silicon-oxide-nitride-oxide-silicon-structures from Bu and White (Solid-State Electron. 45, 113 (2001)).
Published Version
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