Abstract
Chemical enhancement with charge transfer (CT) between the adsorbed Raman molecule and the semiconductor mainly contributed to semiconductor surface-enhanced Raman scattering (SERS). In this work, a three-dimensional (3D) WO3 hollow microsphere is first developed as a SERS-active substrate. This 3D WO3 has a smaller band gap and rich surface defects compared with flake WO3. Interestingly, these properties in the WO3 hollow microspheres lead to an increase in charge transfer, which causes a strong CT interaction between the substrate-Raman molecule interfaces, resulting in a large SERS enhancement. The 3D WO3 showed an excellent SERS performance with an enhancement factor (EF) of 1.6 × 106. Finally, a SERS biosensor is constructed based on the above-mentioned semiconductor materials, which can be used for the sensitive detection of miRNA 155 with a limit of detection (LOD) of 0.18 fM by employing a catalytic hairpin assembly (CHA) strategy. This work provides important guidance for semiconductor topography design to improve the SERS performance, supplying a new strategy for biomolecular analysis and disease diagnosis.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.