Abstract
This is a review describing the use of charge transfer devices for digital memory, analog delay, and image sensing. Short descriptions of different types of charge-coupled devices and MOS bucket-brigade devices are presented. Those factors such as transfer inefficiency, noise, and dark current which affect the performance of these devices in the above applications are discussed. Various possible organizations of charge transfer devices to serve different functions are described. Many charge transfer devices have been fabricated and already indicate a high degree of achievement. Transfer inefficiencies per transfer in the range 10−3 to 10−4 have been measured. Finally, it is projected that charge transfer devices will rapidly find their way into certain analog delay, image sensing, and digital applications.
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