Abstract
Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS)have been used to examine the role of substrate doping and composition in determining theelectronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) depositedonto III–V(110) surfaces. Hybrid SWNT/III–V(110) systems were created through samplecleavage and subsequent nanotube transfer in UHV. Room temperature STSspectra indicate electron transfer from the n-GaAs substrate to the supportedSWNT and from the SWNT to the p-GaAs substrate, resulting in the respectiven-type and p-type doping of the nanotube upon adsorption. STS measurements onInAs(110) supported carbon nanotubes are less uniform, with selected SWNTs onthe n-InAs(110) surface exhibiting distinct electronic changes when shifted intoregistration with the substrate lattice. No such orientation sensitivity is detectedin nanotubes on GaAs surfaces. The potential for systematic modification of aSWNT’s electronic behaviour through intentional substrate engineering couldpresent a new avenue for the design and fabrication of nanotube-based devicestructures.
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