Charge Transfer at the Hetero‐Interface of WSe2/InSe Induces Efficient Doping to Achieve Multi‐Functional Lateral Homo‐Junctions (Adv. Electron. Mater. 12/2021)

Abstract

Lateral Homo-Junctions In article number 2100584, Cheng-Yan Xu, Yang Li and co-workers demonstrate that charge transfer at the hetero-interface is an efficient doping strategy to create lateral homo-junctions with competitive multi-functional performance. The lateral WSe2 homojunctions exhibit promising rectification, photodetection, and photovoltaic characteristics with a maximum FF of 0.39, PCE of 0.3%, and EQE of 24.5%.