Abstract
ZnS/(CdS/ZnS)n (n=2, 4, 8) superlattices were deposited on sapphire substrate by pulsed laser deposition (PLD) with alternate cadmium sulfide (CdS) and zinc sulfide (ZnS) crystals at 100°C. The prepared samples with an average thickness of ∼30nm for ZnS layer and ∼60nm for CdS layer have a wurtzite-type structure. Surface phonon of ZnS and multiple phonons modes for ZnS and CdS were observed from Raman spectra. PL spectra show a strong green emission at ∼496nm, two weak emission bands at ∼400 and ∼577nm, where the emission band at 400nm was attributed to the recombination of surface defects states to valence, the emission band at 577nm as the recombination of Cdi–VCd centers, and the strong emission at ∼496nm is from the charge transfer of electrons from CdS electron to ZnS holes by excitation energy.
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