Abstract
Shubnikov-de Haas (S-dH) and Van der Pauw Hall effect measurements on strained In 0.15Ga 0.85As/Al 0.22Ga 0.78As single quantum well grown by molecular beam epitaxy have been performed to demonstrate the existence of the two-dimensional electron gas in the In 0.15Ga 0.85As single quantum well. The results of the fast Fourier transform results for the S-dH data clearly electron occupation of two subbands in the In 0.15Ga 0.85As single quantum well. Electronic subband energies and wavefunctions in the In 0.15Ga 0.85As quantum well were calculated by a self-consistent method taking into account exchange-correlation effects together without and with strain effects. The calculated total carrier density including the strain effect was in better agreements with that determined from the S-dH and Hall effect measurements.
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