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Abstract
In this work, the nanostructure-assisted “Al/SiO 2/Ir-silicide-NCs/SiO 2/P-Si-sub/Al” stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO 2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 V at sweeps of +/− 10 V by capacitance–voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 × 10 13 cm − 2 , indicating a high trapping efficiency stack for nonvolatile memory application.
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