Abstract
The muonium analog of hydrogen as an isolated impurity was investigated to above 1000 K in n-type, p-type, and high-resistivity 6H-SiC. Temperature-dependent muon spin precession amplitudes from the combined Mu + and Mu - states reveal a series of charge-state transitions. The low-temperature transitions in doped samples are assigned to carrier capture processes. Ionization energies in high-resistivity 6H-SiC locate the Mu donor and acceptor levels at E C - 280 and E V + 860 meV , respectively. The present results place the Mu ( + /- ) pinning energy in 6H-SiC in excellent agreement with that obtained for other group-IV materials.
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