Charge State Dependence of Si K X-Ray Production in Solid and Gaseous Targets by 40 MeV Oxygen Ion Impact

Abstract

We have studied the yield of silicon K x rays induced by 2 1/2 MeV/amu oxygen ions in gaseous (SiH4) and amorphous solid targets. For a gas density 7.4 x 1014 cm-2 the yield increases approximately exponentially with the charge state q of the projectile in the region q = 6, 7, 8. A similar, but smaller, trend is found for a 7 μg/cm2 solid target. At this beam energy the most probable oxygen charge state emerging from a solid Si target is 07+. The x-ray yield from the solid is in accord with the emergent charge state.