Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt–H2 Complex in Silicon

Abstract

We have studied the local motion of hydrogen around a platinum impurity in Si, which was directly probed by measuring the recovery process of stress-induced reorientation of the Pt–H2 complex by isothermal deep-level transient spectroscopy (IT-DLTS). We found that hydrogen more easily moved in the singly negative charge state of the Pt–H2 complex than in the doubly negative charge state, and determined the activation energies for the recovery process to be 0.28 and 0.4 eV in the singly and doubly negative charge states, respectively, from a series of isothermal annealing experiments. We also found that the recovery rate of the Pt–D2 complex in the singly negative charge state is 80% that of the Pt–H2 complex with the same activation energy of 0.28 eV. This isotope effect clearly proves that both complexes have the same atomic configuration and that their recovery process is governed by the atomic jump of hydrogen (deuterium).