Abstract
We studied processes of charge relaxation after point irradiation of AsxSe100-x and GexSe100-x chalcogenide films with an electron beam. Two relaxation processes were found in the dose range from 2,05 * 102 μCcm−2 to 9,3 * 107 μCcm−2. The relaxation times of these processes differ by more than 103 times. It is shown that the first relaxation process is associated with the relaxation of the positive charge in the near-surface region of irradiated film. The second, slower relaxation process is due to the process of the formation of a negative charge layer inside the film and electron-induced mass transport under the action of an internal electric field.
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