Abstract
2D arrays of 0.01 and 0.04 μm 2 area aluminum tunnel junctions with varying junction resistance R N have been studied. For arrays with R N > 5 kΩ the resistance remains finite at low temperatures. Quasi-reentrant behaviour occurs for R N around 10 kΩ. The effect of Coulomb blockade on single electron tunneling is observed, most clearly in high resistance arrays. Preliminary results on the influence of magnetic field on the RT-curves are given.
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