Charge-particles transport in semiconductors characterized by a generalized Langevin equation with a fractional noise

Abstract

From the view of intrinsic noise in semiconductors, the model of charge-particles transport in one-dimensional semiconductors described by a generalized Langevin equation (GLE) driven by a intrinsic fractional Gaussian noise is proposed in this paper. The analytical expression of the average charged particle velocity, the differential mobility, the conductivity of charge-particles, the two-time correlation function of the velocity fluctuation and the power spectral of total current density fluctuation have been derived. Furthermore, the model of motion for the charge-particle subjected to an electric field and a magnetic field governed by GLE is introduced. The expressions of mean values and variances of charged particle velocity, Fokker–Planck equation of charge-particle motion, the asymptotic behaviors of the relaxation functions have been obtained. Under the Hall effect, the Hall angle, the Hall coefficient, as well as the electrical resistivity also have been studied.