Abstract
Electron injection from a surface depletion region, over the surface barrier at an Al 2O 3-silicon interface is studied. The current passing over the barrier is measured by observing the rate of flat-band voltage shift as charge is trapped in the oxide. The data obtained is compared with the predictions of present models for charge injection. It is found that the so-called ‘lucky-electron’ model gives the most generally satisfactory agreement with the observations.
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