Abstract
On the homogeneous (as indicated by a small scanning mercury probe) regions of an SiO2-Si structure the dependences of MIS conductance on frequency were measured. It was found that the equivalent parallel conductance due to surface states has a narrow peak in the Gt/tuω-ωplot. This result contradicts the generally accepted view of small (50-500 A) surface potential fluctuations in SiO2-Si structures, enabling us to suppose that real MIS structures have separate (more than 10 μm) homogeneous regions approaching the ideal interface model. Therefore the concept of a geometrical spectrum of charge fluctuations has to be revised to emphasize large A components (like a 1/f frequency spectrum of noise).
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