Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection

Abstract

Based on the obtained experimental data, a model is developed for the processes of a variation in the charge state of MIS (metal–insulator–semiconductor) structures under the concurrent influence of high-field tunneling electron injection and radiation. The model takes into account the interaction between injected electrons and charges appearing in the dielectric film due to radiation and high-field ionization. It is shown that some holes may be annihilated during the interaction between injected electrons and holes trapped in a SiO2 film, thus leading to the formation of surface states at the interface with silicon. The effect of the electric-field intensity and injection current density on the generation and annihilation of positive charge and the formation of surface states under radiation is studied. The effect of charge processes occurring in the insulator film of a MIS structure under the concurrent action of radiation and high-field electron injection on a change in the threshold voltage of MIS devices and radiation sensors based on them is considered.