Abstract
Tunnel conductances G(V) = dJ/dV(V), where J(V) is the quasiparticle current and V is the voltage, have been calculated for nonsymmetric (CDWS-I-N) and symmetric (CDWS-I-CDWS) tunnel junctions (N, I, and CDWS stand for a normal metal, insulator, and electronically inhomogeneous CDW superconductor, respectively). The CDWS inhomogeneity was shown to be responsible for the appearance of smooth but conspicuous dip-hump structures (DHSs) in G(V) at T » Tc. At higher T, the DHS transforms into a broad pseudogap depletion in the density of states. Good qualitative agreement was obtained between theoretically calculated and experimental G(V) dependences.
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