Abstract
ABSTRACTTime resolved cyclotron resonance measurements are used to investigate more in further detail the effective mass of electrons and holes in InGaAsN epitaxial layers. The In and N content in the alloy are adjusted to yield the latticematching of the epilayers (200 nm thick) to GaAs. A continuous increase of the effective mass of electron and an increase of the resonance associated with holes is observed. Through the evolution of the imaginary part of conductivity as a function of the elapsed time we show that this observation is a coupled cyclotron resonance that may have maxima in the real part of conductivity but should not be necessarily correlated with the “increase” of the effective mass.
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