Charge Contrast Imaging of Gibbsite Using the Variable Pressure SEM

Abstract

The variable pressure scanning electron microscope (VP-SEM) allows imaging of insulators without the need for a conductive coating, due to charge neutralization at the surface from recombination of positive ions and surface electrons. Varying certain parameters such as pressure, bias, and working distance creates incomplete neutralization, and localized charging develops called charge contrast. Although the exact mechanism creating charge contrast imaging (CCI) is unknown, it is agreed that it is related to an optimum charge compensation. The behavior of the CCI is still vague, which presents a problem for determining the mechanisms. This article provides user-friendly methods of finding the optimum levels of charge contrast in the VP-SEM. We show that the CCI is obtained at optimum operating conditions where the specimen current is between 2.5 nA and 3.5 nA. The specimen current is a function of secondary electrons (SE) emission and ionization potential, producing an ion flux. Therefore an optimum specimen current represents the balanced conditions of SE emission and ion flux. Controlling the pressure, working distance, bias, scan rate, and beam current allows the microscopist to set the specimen current at this optimum level for charge contrast imaging. All the work was performed on gibbsite using the S3000N VP-SEM from Hitachi.