Abstract

An equilibrium model is developed for charge confinement in heterojunction acoustic charge transport (HACT) devices. The Poisson–Boltzmann equation is solved for the self-consistent potential and packet charge distribution in a surface acoustic wave (SAW) superimposed on a (Al,Ga)As/GaAs hetrostructure. Numerical results are presented for the charge capacity of a 275 MHz HACT configuration. For a 1 V SAW potential, the charge capacity is limited by the heterojunction well depth rather than by space-charge lowering of the SAW barrier.

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