Abstract
A model for the electric field distribution in semi-insulating GaAs detectors is developed and used to calculate charge collection efficiencies and current pulses generated by α-particles. Comparison with experiment results in estimated electron trapping times of 3 ns in the high electric field region of the detector. It is predicted that the trapping rate will be proportional to the net density of shallow acceptors in the GaAs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.