Abstract
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
Highlights
Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
: This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG
The TCT measurements were carried out at the University of Bern and at the University of Geneva with two setups produced by Particulars [6], each consisting of three moving stages, two used to position the Device Under Test (DUT) and a third to adjust the focus of the laser
Summary
The area of the chip is 18.49 × 24.40 mm and has been produced on substrates with four different nominal resistivities: 20, 80, 200 and 1000 Ω · cm The pixels of this ASIC have an area of 50 × 250 μm and, in order to reduce the sensor capacitance while keeping a large fill factor, the electrode is split into three n-wells (shown in figure 1). Simplified cross section of a test structure pixel It is split into three n-wells connected together and the sensor pn junction is formed between the deep n-well (DNTUB) and the p substrate. The structure used in this work is a 3 × 3 pixel matrix (circled in figure 2), with no electronics, where the n-wells of the pixel are connected directly to a pad: the central pixel (circled in blue) and the surrounding ones are connected to two different lines, so it is possible to measure the charge collected by each of them separately. The central pixel (inside the small blue rectangle) is read out separately from the others
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