Abstract
The temperature influence on charge carrier dynamics is fundamental for the description of the performance of organic diodes and transistors. In this work we treat the temperature on charge transport of both intrachain and interchain process, considering situations where the charge carriers are initially bound in some aspect. We obtain in both cases that the temperature increase can raise the carriers mobility by the same mechanism. The reasons for mobility increase are charge carrier delocalization as well as energy gain for charged polarons. The mechanisms are studied in the scope of the SSH model modified to include temperature effects, impurities and interchain interactions.
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