Charge Carrier Trapping in the Surface Region of BiVO4 Photoanodes

Abstract

Photoelectrochemical water splitting is a promising method for converting solar energy into chemical energy stored in molecular hydrogen and oxygen. However, the efficiency of this process is heavily dependent on the properties of the photoelectrode materials used. Metal oxide semiconductors, such as BiVO4, are commonly used as photoanode materials, but they have poor charge transport properties and surface catalytic activity, which can limit their efficiency.To address these limitations, catalysts are often incorporated onto the surface of the photoanode to improve its surface activity. However, the overall efficiency of the photoelectrochemical process is also influenced by charged defect sites present both in the bulk and on the surface of the semiconductor. These defect sites can trap charges and hamper the kinetics of the process in the millisecond time scale. To address this issue, covalently coordinated catalyst layers and surface doping can be used to eliminate these trapped charges. Moreover, the bulk charge carriers are not entirely decoupled from the surface processes and can be influenced by surface treatments. Therefore, a multi-folded approach that considers both the surface and bulk properties of the photoanode, as well as the role of the catalysts, is necessary to improve the overall efficiency of photoelectrochemical water splitting.We have investigated interfacial charge trapping and transfer processes through a CoOx catalyst layer deposited on BiVO4 by atomic layer deposition (ALD) and cobalt incorporated into the subsurface region. We have shown, by the combination of activity studies and spectroscopy investigations, that oxygen vacancies modified by cobalt incorporation have a remarkable impact on the water oxidation activity and charge injection efficiency. We further demonstrated by transient photocurrent measurements performed by fast LED light pulses (within ms time scale) that the CoOx catalyst layer reduced the number of trapped electrons and improved the rate of charge utilization. Cobalt ions in the subsurface region on the other did not act as catalytic centers but they eliminated the trapping process. We have also confirmed these observations by transient absorption spectroscopy investigations and showed that cobalt incorporation had a much bigger effect on the charge recombination lifetime.