Charge carrier trapping centers in synthetic diamond

Abstract

Abstract Investigations of electrically active defects in synthetic diamond have been performed with the use of the method of currents of thermally stimulated depolarization (TSD). It has been shown that the trapping centers with the most probable activation energy of E = 1.7−2.0 eV (the trapping cross section being S=10−13−10−15 cm−2) are the centers of quick recombination while the trapping centers with the most probable activation energy of E=3.3−3.6 eV and a trapping cross section S=10−8-10−10 cm−2 are the centres of slow recombination. The photosensitivity of synthetic diamond increases with the center concentration.