Abstract
The regional approximation method, developed recently for the analysis of a p–i–n a-Si/c-Si heterojunction solar cell structure, is applied to simulate the internal operation and external characteristics of a n–i–p a-Si/c-Si cell. The derived closed-form solutions have equal basic forms. However, in as much as material parameter values in these two structures differ, also the calculated plots of output characteristics of p–i–n and n–i–p a-Si/c-Si cells are different. The dominant effects which influence the charge-carrier transport in both cells are mutually compared and discussed.
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