Abstract
Contactless transient photoconductivity measurements in a- Si:H/c-Si heterojunctions are presented. The experimental data are decomposed in the contribution of excess electrons in a-Si:H, the contribution of excess carriers in c-Si and the contribution of excess carriers injected from a-Si:H into c-Si. A value for the electron drift mobility of in a-Si:H of 1cm2 V-1 s-1 is determined. At low excitation densities a high injection efficiency is observed, which is quenched by bias illumination.
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