Abstract
The influence of the used substrate and the boron doping concentration of the charge-transport properties of solid-phase crystallized polycrystalline silicon (poly-Si) is explored. The samples were characterized using temperature dependent transport measurements to determine mobility, carrier concentration, and conductivity. While Arrhenius plots of the hole concentration cannot be used to determine the position of the Fermi energy, a detailed analysis of the temperature dependent carrier concentration shows a Meyer–Neldel and an anti-Meyer–Neldel rule. Charge transport in poly-Si on SiN coated Borofloat glass with a boron concentraion [B] < 1016 cm–3 is limited by phonon scattering. On the other hand, for all poly-Si samples on Corning glass and poly-Si on SiN coated Borofloat glass with [B] > 1016 cm–3 charge-carrier transport is governed by thermionic emission over potential barriers. The data are discussed in terms of the Baccarani transport model.
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