Abstract
A study is made of anomalous temperature fields which occur in finite semiconductor specimens. These fields are created by charge carrier sorting over energy due to mutual electron-phonon entrainment at arbitrary rates of electron and phonon energy relaxation at the boundaries. Expressions are found for entrainment levels which depend on specimen dimensions, cooling length, and electron and phonon energy relaxation rates at the boundaries, which when exceeded cause the electron temperature differential between the boundaries to exceed the temperature differential between the heater T1 and cooler T2, producing an initiating phonon flux, while for scattering on deformation acoustical phonons these differentials have opposite algebraic sign. In the case where the electrons are thermally insulated, while the phonons have ideal thermal contact with heater and cooler, for total entrainment the electron temperature differential produced by charge carrier sorting over energy due to phonon entrainment is an order of magnitude higher than T1-T2, and produces the major contribution to thermo-emf in sufficiently short specimens.
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