Abstract
The drift behavior of charge carriers, generated by α-particles of a reference 241Am-source, in electronic grade, single crystal chemical vapor deposition (scCVD) diamond was investigated by the transient current technique (TCT) from room temperature up to ≈473K. Furthermore, the α-spectroscopic behavior was analyzed in terms of charge collection and spectroscopic resolution for the same temperature range. All conducted measurements revealed complete charge collection up to the maximum temperature. The electron–hole-pair creation energies were derived from the TCT as well as from the spectroscopic measurements. The herein presented results imply that high temperature α-spectroscopy with diamond-based semiconductor solid state detectors, using presently available scCVD sensor substrates, is feasible at least up to 473K. Only at the highest applied temperature, the conducted TCT measurements showed distorted signal traces, indicating a uniform positive space charge built-up.
Highlights
Diamond has been in the focus of experimentalists working in harsh environments
The drift behavior of charge carriers, generated by α-particles of a reference 241Am-source, in electronic grade, single crystal chemical vapor deposition diamond was investigated by the transient current technique (TCT) from room temperature up to ≈ 473 K
The presented results imply that high temperature α-spectroscopy with diamond-based semiconductor solid state detectors, using presently available single crystal chemical vapor deposition (scCVD) sensor substrates, is feasible at least up to 473 K
Summary
Diamond has been in the focus of experimentalists working in harsh environments. Its large indirect band gap of 5.47 eV [1] at room temperature in combination with the associated, favorable charge carrier properties in the bulk make diamond a superior material for detectors used in intense radiation fields or at high temperatures. While the performance of diamond-based semiconductor solid state detectors is rather well studied for low temperatures up to and a little above 300 K [7], studies on the charge carrier properties at higher temperatures remain scarce [8,9]. Despite using a variety of different sensor setups, electrical contacting as well as heating approaches, all studies encounter an upper limit of operation between 473 K and 573 K Strategies to overcome this temperature threshold may involve alternative detector setups [18]. Employing fast electronics with a bandwidth of 2 GHz allows for recording the very short rising and falling times of the signal edges Until today, such measurements have been primarily performed from room temperature [20,21] down to cryogenic temperatures of 2 K [7]. Thereto, a charge sensitive preamplifier is employed in order to characterize the energy response using standard pulse height analysis as well as to study the resulting energy resolution in the obtained α-spectra
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