Abstract
We describe how the charge carrier injection and transport are influenced by thermal cracks in a 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene film in terms of the contact resistance and the channel resistance in a TIPS pentacene thin-film transistor (TFT). Through a post-thermal annealing (PTA) process at a certain temperature T a , the high structural order of TIPS-pentacene molecules is produced without thermal cracks, the carrier mobility of the TIPS pentacene TFT is maximized, and both the contact resistance and the channel resistance are minimized. Our quantitative description of the relationship between the PTA treatment and the interfacial resistance behavior would provide a useful basis for understanding the thermal stability and the electrical performance of a solution-processed organic TFT.
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