Abstract

The charge carrier generation mechanism operative under electron bombardment in orthorhombic benzophenone single crystals has been studied and the results are explained on the basis of a combined Warter-Weiz Cobas model. The minimum quantum efficiency for charge carrier pair production is ∼ 2% and since it is field dependent, greater quantum efficiency for charge carrier pair production may be possible for very thin vapour grown crystals. The magnitude of the room temperature drift mobilities in the a, b, and c directions of orthorhombic benzophenone single crystals were (0.016 ± 0.02), (0.049 ± 0.02), and (0.055 ± 0.002) cm2 s−1 V−1 respectively, and were consistent with small polaron charge transport as has been reported earlier.

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