Abstract
We have investigated p-doped GaAs-AlAs resonant tunneling devices with asymmetric barriers under optical excitation. Transport and photoluminescence measurements were performed under identical bias conditions as a function of the light excitation intensity. We have observed the development of additional peaks, induced by illumination, between the main light- and heavy-hole resonances in the current-voltage characteristics (I(V)). We describe the behavior of these photo-induced peaks under a magnetic field parallel to the current. We propose that the observed properties are related to resonant tunneling of photoinduced electrons and associated excitonic effects.
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