Charge Breeding Application of EBIS∕T Devices

Abstract

The demand of highly charged ions of isotopes from all mass regions of the nuclear chart for low energy experiment or for the post acceleration has driven the development of different charge breeding methods. Charge state breeder employ high charge state ion sources like the Electron Beam Ion Source/Trap (EBIS/T) and the Electron Cyclotron Resonance Ion Source (ECRIS). Existing radioactive beam facilities like REX‐ISOLDE or ISAC (TRIUMF) are already using charge state boosters for the post acceleration of radioactive ions. Upcoming facilities like the MSU re‐accelerator project, SPIRAL II, SPES, EURISOL and MATS within FAIR have identified the need of a breeding system, because of the demand for highly charged ions at low energies and due to the available budget. Charge state breeding with EBIS/T devices requires several steps, which need to be optimized. A beam of singly charged ions must be prepared prior to injection into an EBIS/T in order to match the acceptance of the electron beam. An efficient injection and short breeding times are required as well as a high abundance in one specific charge state, which can be manipulated in EBIS/T devices. Further issues of charge breeder development are extraction and purification of the wanted highly charged ion species. The present paper will review the efforts of the EBIS/T community and will give an overview of the planned and running facilities.