Abstract
The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher sp2/sp3 ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed.
Highlights
Most of the physical properties of CVD diamond layers are very similar to that of natural diamonds and can find applications in many fields of science and technology such as a new material and can even replace the conventional materials used so far [1,2,3]
Even undoped diamond layers can be used as electrode material in electrochemistry [7,8,9]
The role of hydrogen atoms in the diamond layers is investigated for many years and still remains far from full understanding [10, 11]
Summary
Most of the physical properties of CVD diamond layers are very similar to that of natural diamonds and can find applications in many fields of science and technology such as a new material and can even replace the conventional materials used so far [1,2,3]. As it is well known, ‘‘as-grown’’ CVD diamond films are always hydrogen terminated, which generates, in both undoped and B-doped, diamond layers p-type surface conductivity [4,5,6]. The type of the preferential orientation determines crystalline quality of diamond layers [14]
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