Charge‐Assisted Engineering of Color Centers in Diamond

Abstract

Owing to its unique optical and spin properties, the nitrogen‐vacancy (NV) center holds the promise of a diamond‐based room‐temperature scalable quantum computer, but the numerous technical and physical issues are not yet overcome, especially the poor N to NV conversion. The NV and other color centers are, however, successfully used as multitasking quantum sensors, and open new routes in quantum sensing technologies. Most recently, several breakthroughs and demonstrations were achieved, shedding a new light on the feasibility of a NV‐based quantum computer. Herein, the recently developed method of charge‐assisted single defect engineering is reviewed. With a controlled charging of the involved species, it modifies the diffusion or kinetics of defect formation and acts as a catalyzer of the NV creation while hindering the formation of competing and perturbing defects such as divacancies or NVH. Very high NV creation yields up to 75% are obtained and the method is suitable to other impurity‐vacancy defects. Furthermore, it has positive consequences on the charge state stability and coherence time of the NV centers, which is as well discussed. Together with the possibility to nowadays deterministically implant single ions, this powerful method brings the scalability of NV qubits closer.