Abstract
AbstractThe characterization of doped regions inside silicon nanowire structures poses a challenge which must be overcome if these structures are to be incorporated into future electronic devices. Precise cross-sectioning of the nanowire along its longitudinal axis is required, followed by two-dimensional electrical measurements with nanometer spatial resolution. The authors have developed an approach to cross-section silicon nanowires and to characterize them by scanning spreading resistance microscopy (SSRM). This paper describes a cleaving- and polishing-based cross-sectioning method for silicon nanowires. High resolution SSRM measurements are demonstrated for epitaxially grown and etched silicon nanowires.
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