Abstract
Highly oriented thin films of high-critical-temperature superconductors contain specific sets of grain boundaries and other interfaces and can serve as model systems in studying the transport behavior of these boundaries. Thin films also provide mechanisms for synthesizing individual grain boundaries and studying their properties. Microstructural characterization of these interfaces and other crystallographic defects is essential to understanding the macroscopic property measurements since both the nanoscale structure and the distribution of the boundaries varies for a given film orientation and set of synthesis parameter.
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