Abstract
This paper presents c-direction hybrid Josephson junctions with base electrodes of Co:BaFe2As2 single crystals. To realize Josephson junctions, it applies standard photolithography technologies and a newly developed surface polishing method that was used. As conventional isotropic s-wave superconductor counter electrodes used double layers of Pb/In. The artificial barrier for the tunneling junctions consists of a thin sputtered Ti layer or a thermally evaporated Al layer; both layers were used as an insulator barrier. For characterizing the Josephson effects with TiOx barrier, we could realize IcRN products of about 13.7 μV and unconventional Ic-T dependencies. The formation of Shapiro steps under the influence of microwave irradiation and magnetic field to the junctions will be discussed as well.
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