Abstract
InAs nanowire with 〈110〉 orientation is proposed for use as an electron spin transport channel for application to spintronics devices, particularly the Datta–Das spin transistor. Stable zinc blende crystal NWs were grown using a molecular beam epitaxy system. Subsequently, global back-gate NW field effect transistors were fabricated, and the superiority of the electrical transport properties within our resultant 〈110〉 NWs was demonstrated by comparing the field-effect mobility with a 〈111〉 NW control sample. Additionally, single NW Hall-bar devices were fabricated, which allowed us to obtain the transport properties accurately, and Hall effect measurements were successfully taken at different temperatures.
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