Abstract
InAs quantum dot (QD) laser heterostructures are grown by molecular beam epitaxy (MBE) system on GaAs substrates and fabricated. The InAs QD lasers exhibit comparable properties of the state-of-the-art QD lasers with the threshold current density J th and efficiency η i of 475A/cm 2 and 72.6%, respectively, at room temperature. The quantum dot laser emission is butt-joint coupled into silicon photonics waveguides by aligning the laser and silicon photonics chips with two translation stages. Due to the optical feedback to the laser cavity at the air/Si interface, the laser power self-pulsation and reduced threshold current density are observed. And the effective facet reflectivity, R eff , of 62.7% is obtained from the theoretically analysis of the laser characteristics. Furthermore, the silicon photonics waveguides interface is coated with the SiO 2 /TiO 2 antireflection (AR) coating layers, and no laser performance interference is observed owing the reduced optical feedback.
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