Characterizations of BAIN films with various boron contents (Conference Presentation)

Abstract

BAlN films were performed by either the flow-modulated epitaxy method or continuous growth method. All BxAl1-xN films are single-phase confirmed by high-resolution 2θ–ω (002) X-ray diffraction. The Boron (B) content of each sample was determined by Secondary Neutral Mass Spectrometry with various values have been achieved from 22 to 34% and reconfirmed by Rutherford backscattering spectrometry. All BAlN samples clearly showed the columnar crystalline on the surface which was observed by AFM measurement. The high B contents can expand the applications of BAlN for deep ultraviolet and power electronic device applications.