Abstract
Characterizations and barrier properties of WNx film with varying nitrogen content have been examined in order to use the Al12W/WNx bilayer as a diffusion barrier in the contact system of Al/Si. The barrier properties of WNx film are evaluated from the viewpoint of the mass transport across the interfaces in the system of Al12W/WNx/Si, by comparing the depth profiles obtained from Auger electron spectroscopy (AES) analysis before and after the heat treatments at various temperatures. It is revealed from the comparison of depth profiles that thermal stabilities of the system are excellent up to 600°C, when the stoichiometric W2N compound film is used as the underlayer of the Al12W/WNx bilayer film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
